2D fin field-effect transistors integrated with epitaxial high-k gate oxide

Nature, Published online: 22 March 2023; doi:10.1038/s41586-023-05797-z

The epitaxial synthesis of high-density, vertically aligned arrays of two-dimensional (2D) fin-oxide heterostructures is described, enabling the fabrication of 2D fin field-effect transistors with high electron mobility and desirable low-power specifications.